K4018www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % UIS tested0.055 at VGS = 10 V 250.057 at VGS = 4.5 V 100 25 21nC0.070 at VGS = 2.5 V 18APPLICATIONS Primary side switchDTO-252GG D SSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless

2SK4018 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOS V) 2SK4018 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mmApplications MAX 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.28 (typ.) High forward transfer admittance : |Yfs|

Preliminary Datasheet RJK4018DPK R07DS0215EJ0200(Previous: REJ03G1490-0100)Silicon N Channel MOS FET Rev2.00High Speed Power Switching Dec 03, 2010Features Low on-resistance RDS(on) = 0.085 typ. (at ID = 21.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Ga

isc N-Channel MOSFET Transistor 2SK4018FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.35(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen