MMDF3N04HD Todos los transistores

 ..1. Size:248K  motorola
 mmdf3n04hd.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3N04HD/D Designer's Data Sheet MMDF3N04HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor DUAL TMOS MiniMOS devices are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density HDTMOS process. These 3.4 AMPERES mini

 ..2. Size:99K  onsemi
 mmdf3n04hd.pdf

MMDF3N04HD Preferred Device Power MOSFET 3 Amps, 40 Volts N-Channel SO-8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source http //onsemi.com diode has a very low reverse recovery time. MiniMOSt devices are designed for use in

 ..3. Size:949K  cn vbsemi
 mmdf3n04hd.pdf

MMDF3N04HD www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Chann

 7.1. Size:240K  motorola
 mmdf3n03hd.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3N03HD/D Designer's Data Sheet MMDF3N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS MiniMOS devices are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density HDTMOS process. 4.1 AMPERES These min

 7.2. Size:254K  motorola
 mmdf3n02hd.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3N02HD/D Designer's Data Sheet MMDF3N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 VOLTS

 7.3. Size:213K  motorola
 mmdf3n06hdrev0.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3N06HD/D Advance Information MMDF3N06HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS Dual HDTMOS are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density TMOS process. These 60 VOLTS miniature surface mou

 7.4. Size:281K  motorola
 mmdf3n03hdrev6.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3N03HD/D Designer's Data Sheet MMDF3N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS MiniMOS devices are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density HDTMOS process. 4.1 AMPERES These min

 7.5. Size:218K  motorola
 mmdf3n06hd.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3N06HD/D Advance Information MMDF3N06HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS Dual HDTMOS are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density TMOS process. These 60 VOLTS miniature surface mou

 7.6. Size:97K  onsemi
 mmdf3n02hd.pdf

MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N-Channel SO-8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. 3 AMPERES, 20 VOLTS MiniMOSt devices ar

 7.7. Size:129K  onsemi
 mmdf3n02hdr2 mmdf3n02hdr2g.pdf

MMDF3N02HD Power MOSFET 3 Amps, 20 Volts N-Channel SO-8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These 3 AMPERES, 20 VOLTS devices are designed for use in