MMDF3N04HD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N04HD/DDesigner's Data SheetMMDF3N04HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. These 3.4 AMPERESmini

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MMDF3N04HDwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N03HD/DDesigner's Data SheetMMDF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 4.1 AMPERESThese min

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N06HD/DAdvance InformationMMDF3N06HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSDual HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process. These60 VOLTSminiature surface mou

MMDF3N02HDPreferred DevicePower MOSFET3 Amps, 20 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.3 AMPERES, 20 VOLTSMiniMOSt devices ar

MMDF3N02HDPower MOSFET3 Amps, 20 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time. These3 AMPERES, 20 VOLTSdevices are designed for use in