MMDF3N04HD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMDF3N04HD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 4 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 7 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 3.3 nS
Conductancia de drenaje-sustrato (Cd): 110 pF
Resistencia entre drenaje y fuente RDS(on): 0.04 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET MMDF3N04HD
MMDF3N04HD Datasheet (PDF)
mmdf3n04hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N04HD/DDesigner's Data SheetMMDF3N04HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. These 3.4 AMPERESmini
mmdf3n04hd.pdf
MMDF3N04HDPreferred DevicePower MOSFET3 Amps, 40 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstanding highenergy in the avalanche and commutation modes and the drain-to-sourcehttp://onsemi.comdiode has a very low reverse recovery time. MiniMOSt devices aredesigned for use in
mmdf3n04hd.pdf
MMDF3N04HDwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann
mmdf3n03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N03HD/DDesigner's Data SheetMMDF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 4.1 AMPERESThese min
mmdf3n02hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N02HD/DDesigner's Data SheetMMDF3N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 VOLTS
mmdf3n06hdrev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N06HD/DAdvance InformationMMDF3N06HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSDual HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process. These60 VOLTSminiature surface mou
mmdf3n03hdrev6.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N03HD/DDesigner's Data SheetMMDF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 4.1 AMPERESThese min
mmdf3n06hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N06HD/DAdvance InformationMMDF3N06HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSDual HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process. These60 VOLTSminiature surface mou
mmdf3n02hd.pdf
MMDF3N02HDPreferred DevicePower MOSFET3 Amps, 20 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.3 AMPERES, 20 VOLTSMiniMOSt devices ar
mmdf3n02hdr2 mmdf3n02hdr2g.pdf
MMDF3N02HDPower MOSFET3 Amps, 20 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time. These3 AMPERES, 20 VOLTSdevices are designed for use in
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
