All MOSFET. MMDF3N04HD Datasheet

 

MMDF3N04HD Datasheet and Replacement


   Type Designator: MMDF3N04HD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SO8
 

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MMDF3N04HD Datasheet (PDF)

 ..1. Size:248K  motorola
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MMDF3N04HD

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N04HD/DDesigner's Data SheetMMDF3N04HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. These 3.4 AMPERESmini

 ..2. Size:99K  onsemi
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MMDF3N04HD

MMDF3N04HDPreferred DevicePower MOSFET3 Amps, 40 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstanding highenergy in the avalanche and commutation modes and the drain-to-sourcehttp://onsemi.comdiode has a very low reverse recovery time. MiniMOSt devices aredesigned for use in

 ..3. Size:949K  cn vbsemi
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MMDF3N04HD

MMDF3N04HDwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

 7.1. Size:240K  motorola
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MMDF3N04HD

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N03HD/DDesigner's Data SheetMMDF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 4.1 AMPERESThese min

Datasheet: ZXMN6A11ZTA-P , CS10N70FA9R , ME2310 , ME9926 , J330 , K3150 , K4018 , MMBF170LT1G , IRF3710 , MCH3409-TL , KD2306A , KD2310 , KD3400SRG , IRLU110P , IRLU3103P , IRLU3410P , ISL9N306AD3S .

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