IRLU3410P Todos los transistores

 

IRLU3410P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLU3410P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 61 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.110(typ) Ohm
   Paquete / Cubierta: TO251
 
   - Selección ⓘ de transistores por parámetros

 

IRLU3410P Datasheet (PDF)

 ..1. Size:1462K  cn vbsemi
 irlu3410p.pdf pdf_icon

IRLU3410P

IRLU3410Pwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

 0.1. Size:285K  international rectifier
 irlr3410pbf irlu3410pbf.pdf pdf_icon

IRLU3410P

PD - 95087AIRLR/U3410PbFl Logic Level Gate DriveHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRLR3410)Dl Straight Lead (IRLU3410) VDSS = 100Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.105Gl Fully Avalanche Ratedl Lead-FreeID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tec

 0.2. Size:285K  international rectifier
 irlu3410pbf irlr3410pbf.pdf pdf_icon

IRLU3410P

PD - 95087AIRLR/U3410PbFl Logic Level Gate DriveHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRLR3410)Dl Straight Lead (IRLU3410) VDSS = 100Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.105Gl Fully Avalanche Ratedl Lead-FreeID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tec

 6.1. Size:261K  inchange semiconductor
 irlu3410.pdf pdf_icon

IRLU3410P

isc N-Channel MOSFET Transistor IRLU3410FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

MOSTRAR MÁS

Otros transistores... MMBF170LT1G , MMDF3N04HD , MCH3409-TL , KD2306A , KD2310 , KD3400SRG , IRLU110P , IRLU3103P , IRFB4115 , ISL9N306AD3S , ISL9N308AD3ST , ISL9N308AD3 , K1307 , K2543 , K2543-FP , K3569 , K3569-FP .

History: 2SK3512L | HUF76139P3

 

 
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