IRLU3410P - описание и поиск аналогов

IRLU3410P www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

isc N-Channel MOSFET Transistor IRLU3410 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN