LU120N Todos los transistores

 

LU120N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LU120N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 61 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.110 typ Ohm

Encapsulados: TO251

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LU120N datasheet

 ..1. Size:867K  cn vbsemi
lu120n.pdf pdf_icon

LU120N

LU120N www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise no

 0.1. Size:173K  1
irlu120n.pdf pdf_icon

LU120N

PD - 91541B IRLR/U120N HEXFET Power MOSFET Surface Mount (IRLR120N) D Straight Lead (IRLU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.185 Fully Avalanche Rated G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. Th

 0.2. Size:270K  international rectifier
irlr120npbf irlu120npbf.pdf pdf_icon

LU120N

IRLR120NPbF IRLU120NPbF HEXFET Power MOSFET l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) D l Advanced Process Technology VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.185 l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize ID = 10A S advanced processing techniques to achieve the lowest possible on-resistance pe

 0.3. Size:221K  inchange semiconductor
irlu120n.pdf pdf_icon

LU120N

isc N-Channel MOSFET Transistor IRLU120N FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

Otros transistores... K3569 , K3569-FP , K4145 , KD2301 , KD3422A , KD4953 , LR024N , LR8103V , IRFP260 , MDD1653RH , MDU2657RH , MDV1595SU , ME20N10 , ME4410 , MEM2301 , MEM2302 , MI4800 .

History: WTN9435 | APM7336K | HIRF730 | R5011ANX | OSG70R750DF

 

 

 

 

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