ME20N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ME20N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 96 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 15 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 24 nC
   Tiempo de subida (tr): 50 nS
   Conductancia de drenaje-sustrato (Cd): 120 pF
   Resistencia entre drenaje y fuente RDS(on): 0.114(typ) Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET ME20N10

ME20N10 Datasheet (PDF)

..1. Size:1167K matsuki electric
me20n10 me20n10-g.pdf

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME20N10 is the N-Channel logic enhancement mode power RDS(ON)78m@VGS=10Vfield effect transistors are produced using high cell density, DMOS RDS(ON)98m@VGS=5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

..2. Size:846K cn vbsemi
me20n10.pdf

ME20N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

8.1. Size:1097K matsuki electric
me20n15 me20n15-g.pdf

ME20N15 / ME20N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)90m@VGS=10V The ME20N15 is the N-Channel logic enhancement mode power RDS(ON)110m@VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially t

8.2. Size:1216K matsuki electric
me20n15f.pdf

ME20N15F N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)90m@VGS=10V The ME20N15F is the N-Channel logic enhancement mode power RDS(ON)110m@VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

9.1. Size:1086K matsuki electric
me20n03 me20n03-g.pdf

ME20N03/ ME20N03-G N-Channel 30V Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME20N03 is the N-Channel logic enhancement mode power RDS(ON) 15m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremel

9.2. Size:842K cn vbsemi
me20n03.pdf

ME20N03www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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