MTD20N03HDLT4G Todos los transistores

MTD20N03HDLT4G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20N03HDL/D Designer's Data Sheet MTD20N03HDL HDTMOS E-FET. Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount LOGIC LEVEL N Channel Enhancement Mode Silicon Gate 20 AMPERES 30 VOLTS This advanced HDTMOS power FET is designed to withstand RDS(on) = 0.035 OHM high energy

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20N03HDL/D Designer's Data Sheet MTD20N03HDL HDTMOS E-FET. Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount LOGIC LEVEL N Channel Enhancement Mode Silicon Gate 20 AMPERES 30 VOLTS This advanced HDTMOS power FET is designed to withstand RDS(on) = 0.035 OHM high energy

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20N06V/D Designer's Data Sheet MTD20N06V TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.080 OHM tance area product about one half that of standa

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA bt MTD20N06HDL/D Advance Information MTD20N06HDL HDTMOS E-FET Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount or LOGIC LEVEL Insertion Mount 20 AMPERES 60 VOLTS N Channel Enhancement Mode Silicon Gate RDS(on) = 0.045 OHM This advanced high cell density HDTMOS E FET is de

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA bt MTD20N06HDL/D Advance Information MTD20N06HDL HDTMOS E-FET Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount or LOGIC LEVEL Insertion Mount 20 AMPERES 60 VOLTS N Channel Enhancement Mode Silicon Gate RDS(on) = 0.045 OHM This advanced high cell density HDTMOS E FET is de

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20N06HD/D Designer's Data Sheet MTD20N06HD HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 20 AMPERES N Channel Enhancement Mode Silicon Gate 60 VOLTS This advanced HDTMOS power FET is designed to withstand RDS(on) = 0.045 OHM high energy in the

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20N06V/D Designer's Data Sheet MTD20N06V TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.080 OHM tance area product about one half that of standa

MTD20N06V Power Field Effect Transistor N-Channel DPAK TMOS V is a new technology designed to achieve an on-resistance http //onsemi.com area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 V(BR)DSS RDS(on) TYP ID MAX volt TMOS devices. Just as with our TMOS E-FET designs, TMOS V is designed to withstand

MTD20N06HDLT4G www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis