MTD20N03HDLT4G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTD20N03HDLT4G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 525 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007(typ) Ohm
   Paquete / Cubierta: TO252

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MTD20N03HDLT4G Datasheet (PDF)

..1. Size:842K cn vbsemi
mtd20n03hdlt4g.pdf

MTD20N03HDLT4Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFET

3.1. Size:220K motorola
mtd20n03hdl.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20N03HDL/DDesigner's Data SheetMTD20N03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELNChannel EnhancementMode Silicon Gate20 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.035 OHMhigh energy

4.1. Size:250K motorola
mtd20n03hd.pdf

7.1. Size:222K motorola
mtd20n06v.pdf

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD20N06V/DDesigner's Data SheetMTD20N06VTMOS VPower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.080 OHMtance area product about onehalf that of standa

7.2. Size:253K motorola
mtd20n06hdl.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAbt MTD20N06HDL/DAdvance InformationMTD20N06HDLHDTMOS E-FET Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface Mount orLOGIC LEVELInsertion Mount20 AMPERES60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.045 OHMThis advanced highcell density HDTMOS EFET is de

7.3. Size:293K motorola
mtd20n06hd.pdf

7.4. Size:274K motorola
mtd20n06h.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20N06HD/DDesigner's Data SheetMTD20N06HDHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FET20 AMPERESNChannel EnhancementMode Silicon Gate60 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.045 OHMhigh energy in the

7.5. Size:257K motorola
mtd20n06vrev1.pdf

7.6. Size:221K onsemi
mtd20n06v-d.pdf

MTD20N06VPower Field EffectTransistorN-Channel DPAKTMOS V is a new technology designed to achieve an on-resistancehttp://onsemi.comarea product about one-half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50 and 60V(BR)DSS RDS(on) TYP ID MAXvolt TMOS devices. Just as with our TMOS E-FET designs, TMOS Vis designed to withstand

7.7. Size:771K cn vbsemi
mtd20n06hdlt4g.pdf

MTD20N06HDLT4Gwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis

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