MTD20N03HDLT4G Datasheet and Replacement

MTD20N03HDLT4Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFET

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20N03HDL/DDesigner's Data SheetMTD20N03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELNChannel EnhancementMode Silicon Gate20 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.035 OHMhigh energy

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20N03HDL/DDesigner's Data SheetMTD20N03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELNChannel EnhancementMode Silicon Gate20 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.035 OHMhigh energy

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD20N06V/DDesigner's Data SheetMTD20N06VTMOS VPower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.080 OHMtance area product about onehalf that of standa

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAbt MTD20N06HDL/DAdvance InformationMTD20N06HDLHDTMOS E-FET Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface Mount orLOGIC LEVELInsertion Mount20 AMPERES60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.045 OHMThis advanced highcell density HDTMOS EFET is de

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAbt MTD20N06HDL/DAdvance InformationMTD20N06HDLHDTMOS E-FET Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface Mount orLOGIC LEVELInsertion Mount20 AMPERES60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.045 OHMThis advanced highcell density HDTMOS EFET is de

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20N06HD/DDesigner's Data SheetMTD20N06HDHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FET20 AMPERESNChannel EnhancementMode Silicon Gate60 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.045 OHMhigh energy in the

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD20N06V/DDesigner's Data SheetMTD20N06VTMOS VPower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.080 OHMtance area product about onehalf that of standa

MTD20N06VPower Field EffectTransistorN-Channel DPAKTMOS V is a new technology designed to achieve an on-resistancehttp://onsemi.comarea product about one-half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50 and 60V(BR)DSS RDS(on) TYP ID MAXvolt TMOS devices. Just as with our TMOS E-FET designs, TMOS Vis designed to withstand

MTD20N06HDLT4Gwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis