NCE4503S Todos los transistores

 

NCE4503S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE4503S

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 755 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 typ Ohm

Encapsulados: SO8

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NCE4503S datasheet

 ..1. Size:461K  ncepower
nce4503s.pdf pdf_icon

NCE4503S

Pb Free Product http //www.ncepower.com NCE4503S N and P-Channel Enhancement Mode Power MOSFET Description The NCE4503S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel

 ..2. Size:996K  cn vbsemi
nce4503s.pdf pdf_icon

NCE4503S

NCE4503S www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = 10 V 11 100 % Rg and UIS Tested N-Channel 30 13.3 Compliant to RoHS Directive 2002/95/EC 0.013 at VGS = 4.5 V 10 APPLICATIONS 0.021 at VGS = - 10 V

 9.1. Size:434K  ncepower
nce4558k.pdf pdf_icon

NCE4503S

Pb Free Product NCE4558K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON)

 9.2. Size:623K  ncepower
nce4555k.pdf pdf_icon

NCE4503S

Pb Free Product NCE4555K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4555K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =45V,I =55A DS D Schematic diagram R =9.2m @ V =10V (Typ) DS(ON) GS R =13m @ V =4.5V (Typ)

Otros transistores... MTP8N06 , N3PF06 , NCE0117 , NCE3010S , NCE3035G , NCE3080KA , NCE30H10 , NCE30H12K , RFP50N06 , NCE4606 , NCE4953 , NCE55P04S , NCE55P05S , NCE60P25K , NDS331N-NL , NDS332P-NL , NDS9948-NL .

History: SM7340EHKP | JCS4N60CB | SM4804DSK | 2SK3496-01MR | AP4511GED-HF | LPM2301B3F

 

 

 

 

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