NCE4503S MOSFET Datasheet: NP-Ch, 30V, 8.8A. Full specification with pinout and replacement list

NCE4503S Specs and Replacement

   Type Designator: NCE4503S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 755 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011(typ) Ohm
   Package: SO8

NCE4503S substitution

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NCE4503S datasheet

..1. Size:461K ncepower
nce4503s.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE4503S N and P-Channel Enhancement Mode Power MOSFET Description The NCE4503S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel ... See More ⇒

..2. Size:996K cn vbsemi
nce4503s.pdf pdf_icon

NCE4503S www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = 10 V 11 100 % Rg and UIS Tested N-Channel 30 13.3 Compliant to RoHS Directive 2002/95/EC 0.013 at VGS = 4.5 V 10 APPLICATIONS 0.021 at VGS = - 10 V... See More ⇒

9.1. Size:434K ncepower
nce4558k.pdf pdf_icon

Pb Free Product NCE4558K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON) ... See More ⇒

9.2. Size:623K ncepower
nce4555k.pdf pdf_icon

Pb Free Product NCE4555K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4555K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =45V,I =55A DS D Schematic diagram R =9.2m @ V =10V (Typ) DS(ON) GS R =13m @ V =4.5V (Typ) ... See More ⇒