NCE4606 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCE4606 datasheet

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Pb Free Product http //www.ncepower.com NCE4606 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

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NCE4606 www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS

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http //www.ncepower.com NCE4606B N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel General Features N-Channel Schematic diagram VDS

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http //www.ncepower.com NCE4606A N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Sc