NCE4953 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE4953
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 32 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035(typ) Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET NCE4953

NCE4953 Datasheet (PDF)

..1. Size:371K ncepower
nce4953.pdf

Pb Free Producthttp://www.ncepower.com NCE4953NCE P-Channel Enhancement Mode Power MOSFET Description D1D2The NCE4953 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S1 S2load switch or in PWM applications. Schematic diagram General Features VD

..2. Size:868K cn vbsemi
nce4953.pdf

NCE4953www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View

0.1. Size:331K ncepower
nce4953a.pdf

Pb Free Producthttp://www.ncepower.com NCE4953ANCE P-Channel Enhancement Mode Power MOSFET Description D1D2The NCE4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram General Features

9.1. Size:290K ncepower
nce4963.pdf

Pb Free Producthttp://www.ncepower.comNCE4963NCE P-Channel Enhancement Mode Power MOSFETD1D2DescriptionThe NCE4963 uses advanced trench technology to provideG1 G2excellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aS1 S2load switch or in PWM applications.Schematic diagramGeneral Features V =-20

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