NCE4953 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE4953
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 215 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 typ Ohm
Encapsulados: SO8
Búsqueda de reemplazo de NCE4953 MOSFET
- Selecciónⓘ de transistores por parámetros
NCE4953 datasheet
nce4953.pdf
Pb Free Product http //www.ncepower.com NCE4953 NCE P-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE4953 uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features VD
nce4953.pdf
NCE4953 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View
nce4963.pdf
Pb Free Product http //www.ncepower.com NCE4963 NCE P-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE4963 uses advanced trench technology to provide G1 G2 excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features V =-20
Otros transistores... NCE0117 , NCE3010S , NCE3035G , NCE3080KA , NCE30H10 , NCE30H12K , NCE4503S , NCE4606 , AO3407 , NCE55P04S , NCE55P05S , NCE60P25K , NDS331N-NL , NDS332P-NL , NDS9948-NL , NIF5002NT1G , NIF5002NT3G .
History: IRFB3207Z | SI1028X | AP4951GM | NTR4101P | NCE30H12K | NIF5002NT1G | PTW50N20
History: IRFB3207Z | SI1028X | AP4951GM | NTR4101P | NCE30H12K | NIF5002NT1G | PTW50N20
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