NCE4953 Datasheet. Specs and Replacement

Type Designator: NCE4953  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm

Package: SO8

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NCE4953 datasheet

 ..1. Size:371K  ncepower
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NCE4953

Pb Free Product http //www.ncepower.com NCE4953 NCE P-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE4953 uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features VD... See More ⇒

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NCE4953

NCE4953 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View... See More ⇒

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NCE4953

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NCE4953

Pb Free Product http //www.ncepower.com NCE4963 NCE P-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE4963 uses advanced trench technology to provide G1 G2 excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features V =-20... See More ⇒

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Detailed specifications: NCE0117, NCE3010S, NCE3035G, NCE3080KA, NCE30H10, NCE30H12K, NCE4503S, NCE4606, 4N60, NCE55P04S, NCE55P05S, NCE60P25K, NDS331N-NL, NDS332P-NL, NDS9948-NL, NIF5002NT1G, NIF5002NT3G

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