FDB031N08 Todos los transistores

 

FDB031N08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDB031N08
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 235 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 169 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
   Paquete / Cubierta: TO263 D2PAK

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FDB031N08 Datasheet (PDF)

 ..1. Size:722K  fairchild semi
fdb031n08.pdf

FDB031N08
FDB031N08

July 2008FDB031N08tmN-Channel PowerTrench MOSFET 75V, 235A, 3.1mFeatures Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors adcanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superi

 9.1. Size:538K  fairchild semi
fdb039n06.pdf

FDB031N08
FDB031N08

July 2009FDB039N06 N-Channel PowerTrench MOSFET60V, 174A, 3.9mFeatures General Description RDS(on) = 2.95m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yetmaintain superior switching perfor

 9.2. Size:562K  fairchild semi
fdb035n10a.pdf

FDB031N08
FDB031N08

November 2013FDB035N10A N-Channel PowerTrench MOSFET100 V, 214 A, 3.5 mFeatures Description RDS(on) = 3.0 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while main-taining superior switching performance.

 9.3. Size:236K  fairchild semi
fdb035an06a0.pdf

FDB031N08
FDB031N08

July 2002FDB035AN06A0 N-Channel PowerTrench MOSFET60V, 80A, 3.5mFeatures Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC co

 9.4. Size:281K  fairchild semi
fdb035an06 f085.pdf

FDB031N08
FDB031N08

January 2012FDB035AN06A0_F085N-Channel PowerTrench MOSFET60V, 80A, 3.5mFeatures Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) D

 9.5. Size:948K  onsemi
fdb035an06a0.pdf

FDB031N08
FDB031N08

FDB035AN06A0N-Channel PowerTrench MOSFET60 V, 80 A, 3.5 mFeaturesApplications RDS(on) = 3.2 m ( Typ.) @ VGS = 10 V, ID = 80 A QG(tot) = 95 nC ( Typ.) @ VGS = 10 V Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Low Miller Charge Motor drives and Uninterruptible Power Supplies Low Qrr Body Diode UIS Capabil

 9.6. Size:401K  onsemi
fdb0300n1007l.pdf

FDB031N08
FDB031N08

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.7. Size:205K  inchange semiconductor
fdb035an06a0.pdf

FDB031N08
FDB031N08

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDB035AN06A0FEATURESWith TO-263(D2PAK) packagingSingle pulse and repetitive pulseHigh speed switchingLow miller chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant swit

Otros transistores... FDA69N25 , FDA70N20 , STU404D , FDA8440 , FDB016N04AL7 , FDB024N04AL7 , FDB024N06 , FDB029N06 , IRFP460 , FDB035AN06A0 , FDB035N10A , STU407D , FDB039N06 , FDB045AN08A0 , FDB045AN08A0F085 , FDB047N10 , STU405DH .

 

 
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