FDB031N08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB031N08
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 375 W
Voltaje máximo drenador - fuente |Vds|: 75 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 235 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 169 nC
Resistencia entre drenaje y fuente RDS(on): 0.0031 Ohm
Paquete / Cubierta: TO263 D2PAK
Búsqueda de reemplazo de MOSFET FDB031N08
FDB031N08 Datasheet (PDF)
fdb031n08.pdf
July 2008FDB031N08tmN-Channel PowerTrench MOSFET 75V, 235A, 3.1mFeatures Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors adcanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superi
fdb039n06.pdf
July 2009FDB039N06 N-Channel PowerTrench MOSFET60V, 174A, 3.9mFeatures General Description RDS(on) = 2.95m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yetmaintain superior switching perfor
fdb035n10a.pdf
November 2013FDB035N10A N-Channel PowerTrench MOSFET100 V, 214 A, 3.5 mFeatures Description RDS(on) = 3.0 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while main-taining superior switching performance.
fdb035an06a0.pdf
July 2002FDB035AN06A0 N-Channel PowerTrench MOSFET60V, 80A, 3.5mFeatures Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC co
fdb035an06 f085.pdf
January 2012FDB035AN06A0_F085N-Channel PowerTrench MOSFET60V, 80A, 3.5mFeatures Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) D
fdb035an06a0.pdf
FDB035AN06A0N-Channel PowerTrench MOSFET60 V, 80 A, 3.5 mFeaturesApplications RDS(on) = 3.2 m ( Typ.) @ VGS = 10 V, ID = 80 A QG(tot) = 95 nC ( Typ.) @ VGS = 10 V Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Low Miller Charge Motor drives and Uninterruptible Power Supplies Low Qrr Body Diode UIS Capabil
fdb0300n1007l.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb035an06a0.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDB035AN06A0FEATURESWith TO-263(D2PAK) packagingSingle pulse and repetitive pulseHigh speed switchingLow miller chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant swit
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
