FDB031N08 - описание и поиск аналогов

 

FDB031N08. Аналоги и основные параметры

Наименование производителя: FDB031N08

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 375 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 75 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 235 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm

Тип корпуса: TO263 D2PAK

Аналог (замена) для FDB031N08

- подборⓘ MOSFET транзистора по параметрам

 

FDB031N08 даташит

 ..1. Size:722K  fairchild semi
fdb031n08.pdfpdf_icon

FDB031N08

July 2008 FDB031N08 tm N-Channel PowerTrench MOSFET 75V, 235A, 3.1m Features Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s adcanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superi

 9.1. Size:538K  fairchild semi
fdb039n06.pdfpdf_icon

FDB031N08

July 2009 FDB039N06 N-Channel PowerTrench MOSFET 60V, 174A, 3.9m Features General Description RDS(on) = 2.95m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching perfor

 9.2. Size:562K  fairchild semi
fdb035n10a.pdfpdf_icon

FDB031N08

November 2013 FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 m Features Description RDS(on) = 3.0 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching performance.

 9.3. Size:236K  fairchild semi
fdb035an06a0.pdfpdf_icon

FDB031N08

July 2002 FDB035AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.5m Features Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC co

Другие MOSFET... FDA69N25 , FDA70N20 , STU404D , FDA8440 , FDB016N04AL7 , FDB024N04AL7 , FDB024N06 , FDB029N06 , IRFP460 , FDB035AN06A0 , FDB035N10A , STU407D , FDB039N06 , FDB045AN08A0 , FDB045AN08A0F085 , FDB047N10 , STU405DH .

 

 

 

 

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