NTD2955T4G Todos los transistores

 ..1. Size:827K  cn vbsemi
 ntd2955t4g.pdf

NTD2955T4G www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy

 7.1. Size:68K  onsemi
 ntd2955.pdf

NTD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe opera

 7.2. Size:92K  onsemi
 ntd2955-p.pdf

NTD2955, NTD2955P Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating

 7.3. Size:98K  onsemi
 ntd2955 nvd2955.pdf

NTD2955, NVD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating sa

 7.4. Size:114K  onsemi
 ntd2955-1g ntd2955g.pdf

NTD2955, NTD2955P, NVD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power V(BR)DSS RDS(on) TYP ID MAX motor controls. These devices are particularly well suited for bridge -60 V

 7.5. Size:829K  cn vbsemi
 ntd2955vt4g.pdf

NTD2955VT4G www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S