All MOSFET. NTD2955T4G Datasheet

 

NTD2955T4G Datasheet and Replacement


   Type Designator: NTD2955T4G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061(typ) Ohm
   Package: TO252
 

 NTD2955T4G substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTD2955T4G Datasheet (PDF)

 ..1. Size:827K  cn vbsemi
ntd2955t4g.pdf pdf_icon

NTD2955T4G

NTD2955T4Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy

 7.1. Size:68K  onsemi
ntd2955.pdf pdf_icon

NTD2955T4G

NTD2955Power MOSFET -60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls, these devices are particularly well suited for bridgecircuits where diode speed and commutating safe opera

 7.2. Size:92K  onsemi
ntd2955-p.pdf pdf_icon

NTD2955T4G

NTD2955, NTD2955PPower MOSFET -60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls. These devices are particularly well suited for bridgecircuits where diode speed and commutating

 7.3. Size:98K  onsemi
ntd2955 nvd2955.pdf pdf_icon

NTD2955T4G

NTD2955, NVD2955Power MOSFET-60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls. These devices are particularly well suited for bridgecircuits where diode speed and commutating sa

Datasheet: NDS332P-NL , NDS9948-NL , NIF5002NT1G , NIF5002NT3G , NT2955G , NTB25P06T4G , NTD12N10-1G , NTD20N06LT4G , IRFZ48N , NTD2955VT4G , NTD4860NT4G , NTD5807NT , NTD5865NL-1G , NTD5865NLT4G , NTD6416ANT , NTE4153NT1G , NTF3055-100T .

History: NTD6N15 | MMBF0201NLT1G | IRFPS43N50KPBF | SMK0160D | NTB85N03 | IRHN57250SE | TPS1120Y

Keywords - NTD2955T4G MOSFET datasheet

 NTD2955T4G cross reference
 NTD2955T4G equivalent finder
 NTD2955T4G lookup
 NTD2955T4G substitution
 NTD2955T4G replacement

 

 
Back to Top

 


 
.