NTR4502PT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTR4502PT1G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 24 nC
Tiempo de subida (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 150 pF
Resistencia entre drenaje y fuente RDS(on): 0.055(typ) Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET NTR4502PT1G
NTR4502PT1G Datasheet (PDF)
ntr4502pt1g.pdf
NTR4502PT1Gwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT
ntr4502pt1 nvtr4502p.pdf
NTR4502P, NVTR4502PPower MOSFET-30 V, -1.95 A, Single, P-Channel,SOT-23Featureshttp://onsemi.com Leading Planar Technology for Low Gate Charge / Fast SwitchingV(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm)-30 V -1.95 A AEC Q101 Qualified - NVTR4502P240 mW @ -4.5 V
ntr4502p.pdf
NTR4502PPower MOSFET-30 V, -1.95 A, Single, P-Channel,SOT-23Featureshttp://onsemi.com Leading Planar Technology for Low Gate Charge / Fast SwitchingV(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm)-30 V -1.95 A Pb-Free Packages are Available240 mW @ -4.5 VApplicatio
ntr4502p nvtr4502p.pdf
NTR4502P, NVTR4502PPower MOSFET-30 V, -1.95 A, Single, P-Channel,SOT-23Featureshttp://onsemi.com Leading Planar Technology for Low Gate Charge / Fast SwitchingV(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm)-30 V -1.95 A AEC Q101 Qualified - NVTR4502P240 mW @ -4.5 V
ntr4502p nvtr4502p.pdf
Product specificationNTR4502P, NVTR4502PPower MOSFETV(BR)DSS RDS(on) TYP ID Max (Note 1)155 mW @ -10 V-30 V, -1.95 A, Single, P-Channel,-30 V -1.95 ASOT-23 240 mW @ -4.5 VP-Channel MOSFETFeaturesS Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT-23 Surface Mount for Small Footprint (3 X 3 mm) G AEC Q
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