PHB32N06 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PHB32N06 datasheet

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PHB32N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dir

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PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor Rev. 01 06 November 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP32N06LT in SOT78 (TO220AB) PHB32N06LT in SOT404 (D2-PAK). 2. Features TrenchMOS technology Logic level compatible.

0.2. Size:851K nxp
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PHB32N06LT N-channel TrenchMOS logic level FET Rev. 02 30 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feature

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