PHB32N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dir

PHP32N06LT; PHB32N06LTN-channel enhancement mode field effect transistorRev. 01 06 November 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP32N06LT in SOT78 (TO220AB)PHB32N06LT in SOT404 (D2-PAK).2. Features TrenchMOS technology Logic level compatible.

PHB32N06LTN-channel TrenchMOS logic level FETRev. 02 30 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feature