SI1553CDL-T1-GE3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI1553CDL-T1-GE3
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.17 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 3.03 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 1.25 nC
Tiempo de subida (tr): 22 nS
Resistencia entre drenaje y fuente RDS(on): 0.090(typ) Ohm
Paquete / Cubierta: SC70-6
Búsqueda de reemplazo de MOSFET SI1553CDL-T1-GE3
SI1553CDL-T1-GE3 Datasheet (PDF)
si1553cdl-t1-ge3.pdf
Si1553CDL-T1-GE3www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = -
si1553cdl.pdf
Si1553CDLVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.390 at VGS = 4.5 V 0.7 TrenchFET Power MOSFETN-Channel 20 0.510 at VGS = 2.7 V 0.5 0.55 100 % Rg Tested0.578 at VGS = 2.5 V 0.5 Compliant to RoHS Directive 2002/95/EC0.850 at VGS
si1555dl.pdf
Si1555DLVishay SiliconixComplementary Low-Threshold MOSFET PairFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.385 at VGS = 4.5 V0.70 TrenchFET Power MOSFETN-Channel 200.630 at VGS = 2.5 V0.54 Compliant to RoHS Directive 2002/95/EC0.600 at VGS = - 4.5 V - 0.600.850 at VGS = - 2.5 V - 0.50P-Cha
si1557dh.pdf
Si1557DHVishay SiliconixN- and P-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.235 at VGS = 4.5 V 1.3 TrenchFET Power MOSFETs0.280 at VGS = 2.5 V N-Channel 12 1.2 Thermally Enhanced SC-70 Package0.340 at VGS = 1.8 V 1.0 Fast Switching to Minimize Gate and Switchin
si1551dl.pdf
Si1551DLVishay SiliconixComplementary 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition1.9 at VGS = 4.5 V 0.30 TrenchFET Power MOSFET: 2.5 V Rated3.7 at VGS = 2.7 V N-Channel 20 0.22 0.72 Compliant to RoHS Directive 2002/95/EC4.2 at VGS = 2.5 V0.210.995 at VGS = - 4.5 V
si1555dl-t1.pdf
SI1555DL-T1www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = - 4.5 V
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