All MOSFET. SI1553CDL-T1-GE3 Datasheet

 

SI1553CDL-T1-GE3 Datasheet and Replacement


   Type Designator: SI1553CDL-T1-GE3
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.090(typ) Ohm
   Package: SC70-6
 

 SI1553CDL-T1-GE3 substitution

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SI1553CDL-T1-GE3 Datasheet (PDF)

 0.1. Size:874K  cn vbsemi
 si1553cdl-t1-ge3.pdf pdf_icon

SI1553CDL-T1-GE3

Si1553CDL-T1-GE3www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = -

 5.1. Size:258K  vishay
 si1553cdl.pdf pdf_icon

SI1553CDL-T1-GE3

Si1553CDLVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.390 at VGS = 4.5 V 0.7 TrenchFET Power MOSFETN-Channel 20 0.510 at VGS = 2.7 V 0.5 0.55 100 % Rg Tested0.578 at VGS = 2.5 V 0.5 Compliant to RoHS Directive 2002/95/EC0.850 at VGS

 9.1. Size:233K  vishay
 si1555dl.pdf pdf_icon

SI1553CDL-T1-GE3

Si1555DLVishay SiliconixComplementary Low-Threshold MOSFET PairFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.385 at VGS = 4.5 V0.70 TrenchFET Power MOSFETN-Channel 200.630 at VGS = 2.5 V0.54 Compliant to RoHS Directive 2002/95/EC0.600 at VGS = - 4.5 V - 0.600.850 at VGS = - 2.5 V - 0.50P-Cha

 9.2. Size:269K  vishay
 si1557dh.pdf pdf_icon

SI1553CDL-T1-GE3

Si1557DHVishay SiliconixN- and P-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.235 at VGS = 4.5 V 1.3 TrenchFET Power MOSFETs0.280 at VGS = 2.5 V N-Channel 12 1.2 Thermally Enhanced SC-70 Package0.340 at VGS = 1.8 V 1.0 Fast Switching to Minimize Gate and Switchin

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Datasheet: PHK12NQ03L , RFD15P05SM , RFP6P08 , RJK0822SPN , RRS130N03 , RSS100N03T , SDM4953A , SI1539CDL-T1 , IRF640 , SI1555DL-T1 , SI1967DH-T1-GE3 , SI2300BDS-T1-GE3 , SI2300DS-T1-GE3 , SI2301ADS-T1 , SI2301BDS-T1-GE3 , SI2301CDS-T1 , SI2301DS-T1-GE3 .

History: NTGS3441BT1G | TPA60R330M

Keywords - SI1553CDL-T1-GE3 MOSFET datasheet

 SI1553CDL-T1-GE3 cross reference
 SI1553CDL-T1-GE3 equivalent finder
 SI1553CDL-T1-GE3 lookup
 SI1553CDL-T1-GE3 substitution
 SI1553CDL-T1-GE3 replacement

 

 
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