SI1967DH-T1-GE3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI1967DH-T1-GE3
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.14 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 45 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.155(typ) Ohm
Paquete / Cubierta: SC70-6
Búsqueda de reemplazo de SI1967DH-T1-GE3 MOSFET
SI1967DH-T1-GE3 PDF Specs
si1967dh-t1-ge3.pdf
SI1967DH-T1-GE3 www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET - 20 2.7 nC 0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SC-70=-6 S1 S2 S1 1 6 D1 G1 G2 G1 ... See More ⇒
si1967dh.pdf
Si1967DH Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.490 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET PWM Optimized - 20 0.640 at VGS = - 2.5 V - 1.2 1.6 nC Compliant to RoHS Directive 2002/95/EC 0.790 at VGS = - 1.8 V - 1.0 APPLICATI... See More ⇒
si1965dh.pdf
Si1965DH Vishay Siliconix Dual P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.390 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET - 12 0.535 at VGS = - 2.5 V - 1.2 1.7 nC Compliant to RoHS Directive 2002/95/EC 0.710 at VGS = - 1.8 V - 1.1 APPLICATIONS Load Switch ... See More ⇒
si1965dh.pdf
SI1965DH www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET - 20 2.7 nC 0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SC-70=-6 S1 S2 S1 1 6 D1 G1 G2 G1 2 5 G2 ... See More ⇒
Otros transistores... RFP6P08 , RJK0822SPN , RRS130N03 , RSS100N03T , SDM4953A , SI1539CDL-T1 , SI1553CDL-T1-GE3 , SI1555DL-T1 , IRF640 , SI2300BDS-T1-GE3 , SI2300DS-T1-GE3 , SI2301ADS-T1 , SI2301BDS-T1-GE3 , SI2301CDS-T1 , SI2301DS-T1-GE3 , SI2302CDS-T1-GE3 , SI2302DS-T1-GE3 .
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