SI1967DH-T1-GE3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SI1967DH-T1-GE3 Datasheet (PDF)

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SI1967DH-T1-GE3www.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET- 20 2.7 nC0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSC-70=-6S1 S2S1 1 6 D1G1 G2G1

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Si1967DHVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.490 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET PWM Optimized- 20 0.640 at VGS = - 2.5 V - 1.2 1.6 nC Compliant to RoHS Directive 2002/95/EC0.790 at VGS = - 1.8 V - 1.0APPLICATI

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Si1965DHVishay SiliconixDual P-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.390 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET- 12 0.535 at VGS = - 2.5 V - 1.2 1.7 nC Compliant to RoHS Directive 2002/95/EC0.710 at VGS = - 1.8 V - 1.1APPLICATIONS Load Switch

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SI1965DHwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET- 20 2.7 nC0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSC-70=-6S1 S2S1 1 6 D1G1 G2G1 2 5 G2

Otros transistores... RFP6P08 , RJK0822SPN , RRS130N03 , RSS100N03T , SDM4953A , SI1539CDL-T1 , SI1553CDL-T1-GE3 , SI1555DL-T1 , IRFP460 , SI2300BDS-T1-GE3 , SI2300DS-T1-GE3 , SI2301ADS-T1 , SI2301BDS-T1-GE3 , SI2301CDS-T1 , SI2301DS-T1-GE3 , SI2302CDS-T1-GE3 , SI2302DS-T1-GE3 .