SI2324DS-T1-GE3 Todos los transistores

SI2324DS-T1-GE3 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.240 at VGS = 10 V 2.0 Material categorization 0.250 at VGS = 6 V 100 1.8 2.9 nC 0.260 at VGS = 4.5 V 1.7 APPLICATIONS DC/DC Converters Load Switch LED Back

SMD Type MOSFET IC SMD Type N-Channel Enhancement MOSFET SI2324DS (KI2324DS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDSS = 100V ID = 2.3 A (VGS = 10V) RDS(ON) 234m (VGS = 10V) 1 2 +0.02 RDS(ON) 267m (VGS = 6V) +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 D RDS(ON) 278m (VGS = 4.5V) 1. Gate 2. Source G 3. Drain

SI2324A Features TrenchFET Power MOSFET Low RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel MOSFET Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55 C to +150 C S