SI2399DS-T1 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SI2399DS-T1 datasheet

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Si2399DS-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

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SMD Type MOSFET P-Channel MOSFET SI2399DS (KI2399DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = -20V ID = -6A 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 34m (VGS = -10V) 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 45m (VGS = -4.5V) RDS(ON) 67m (VGS = -2.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum R

6.1. Size:172K vishay
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Si2399DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.034 at VGS = - 10 V - 6e TrenchFET Power MOSFET - 20 0.045 at VGS = - 4.5 V - 6e 10 nC 100 % Rg Tested 0.067 at VGS = - 2.5 V - 5.2 Compliant to RoHS Directive 2002/95/EC APPLICATIO

6.2. Size:1691K kexin
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SMD Type MOSFET P-Channel MOSFET SI2399DS (KI2399DS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = -20V ID = -6A 1 2 RDS(ON) 34m (VGS = -10V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 45m (VGS = -4.5V) RDS(ON) 67m (VGS = -2.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Rati

Otros transistores... SI2312CDS-T1-GE3 , SI2324DS-T1-GE3 , SI2333CDS-T1-GE3 , SI2333DDS-T1 , SI2333DS-T1-GE3 , SI2335DS-T1 , SI2342DS-T1 , SI2351DS-T1 , 2N7002 , SI3911DV-T1 , SI4401BDY-T1 , SI4401DDY-T1-GE3 , SI4405DY-T1 , SI4410DY-T1 , SI4416DY , SI4421DY-T1 , SI4431CDY-T1-E3 .