FDB047N10 Todos los transistores

 

FDB047N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDB047N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 164 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 160 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
   Paquete / Cubierta: TO263 D2PAK

 Búsqueda de reemplazo de MOSFET FDB047N10

 

FDB047N10 Datasheet (PDF)

 ..1. Size:551K  fairchild semi
fdb047n10.pdf

FDB047N10
FDB047N10

August 2008FDB047N10tmN-Channel PowerTrench MOSFET 100V, 164A, 4.7mDescription General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advance PowerTrench process that has been especially Fast switching speedtailored to minimize the on-state resistance and yet maintain superior switch

 ..2. Size:1364K  onsemi
fdb047n10.pdf

FDB047N10
FDB047N10

 9.1. Size:543K  fairchild semi
fdb045an08a0.pdf

FDB047N10
FDB047N10

May 2006tmFDB045AN08A0N-Channel PowerTrench MOSFET 75V, 80A, 4.5mFeatures Applications rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems UIS Capability (Si

 9.2. Size:252K  fairchild semi
fdb045an08 f085.pdf

FDB047N10
FDB047N10

June 2010_FDB045AN08A0 F085N-Channel PowerTrench MOSFET 75V, 80A, 4.5m Features Applications rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems UIS Capability

 9.3. Size:693K  onsemi
fdb045an08a0-f085.pdf

FDB047N10
FDB047N10

FDB045AN08A0-F085N-Channel PowerTrench MOSFET Applications75V, 80A, 4.5m 42V Automotive Load Control Starter / Alternator SystemsFeatures rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A Electronic Power Steering Systems Qg(tot) = 92nC (Typ.), VGS = 10V Electronic Valve Train Systems Low Miller Charge DC-DC converters and Off-line UPS Low QRR B

Otros transistores... FDB029N06 , FDB031N08 , FDB035AN06A0 , FDB035N10A , STU407D , FDB039N06 , FDB045AN08A0 , FDB045AN08A0F085 , IRF3710 , STU405DH , FDB050AN06A0 , FDB060AN08A0 , FDB070AN06A0 , FDB075N15A , FDB082N15A , FDB088N08 , FDB110N15A .

 

 
Back to Top

 


FDB047N10
  FDB047N10
  FDB047N10
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top