FDB047N10 Datasheet. Specs and Replacement

Type Designator: FDB047N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 164 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm

Package: TO263 D2PAK

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FDB047N10 datasheet

 ..1. Size:551K  fairchild semi
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FDB047N10

August 2008 FDB047N10 tm N-Channel PowerTrench MOSFET 100V, 164A, 4.7m Description General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon- ductor s advance PowerTrench process that has been especially Fast switching speed tailored to minimize the on-state resistance and yet maintain superior switch... See More ⇒

 ..2. Size:1364K  onsemi
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FDB047N10

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 9.1. Size:543K  fairchild semi
 fdb045an08a0.pdf pdf_icon

FDB047N10

May 2006 tm FDB045AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.5m Features Applications rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems UIS Capability (Si... See More ⇒

 9.2. Size:252K  fairchild semi
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FDB047N10

June 2010 _ FDB045AN08A0 F085 N-Channel PowerTrench MOSFET 75V, 80A, 4.5m Features Applications rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems UIS Capability ... See More ⇒

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Detailed specifications: FDB029N06, FDB031N08, FDB035AN06A0, FDB035N10A, STU407D, FDB039N06, FDB045AN08A0, FDB045AN08A0F085, IRFP260N, STU405DH, FDB050AN06A0, FDB060AN08A0, FDB070AN06A0, FDB075N15A, FDB082N15A, FDB088N08, FDB110N15A

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