All MOSFET. FDB047N10 Datasheet

 

FDB047N10 Datasheet and Replacement


   Type Designator: FDB047N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 164 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 160 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: TO263 D2PAK
 

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FDB047N10 Datasheet (PDF)

 ..1. Size:551K  fairchild semi
 fdb047n10.pdf pdf_icon

FDB047N10

August 2008FDB047N10tmN-Channel PowerTrench MOSFET 100V, 164A, 4.7mDescription General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advance PowerTrench process that has been especially Fast switching speedtailored to minimize the on-state resistance and yet maintain superior switch

 ..2. Size:1364K  onsemi
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FDB047N10

 9.1. Size:543K  fairchild semi
 fdb045an08a0.pdf pdf_icon

FDB047N10

May 2006tmFDB045AN08A0N-Channel PowerTrench MOSFET 75V, 80A, 4.5mFeatures Applications rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems UIS Capability (Si

 9.2. Size:252K  fairchild semi
 fdb045an08 f085.pdf pdf_icon

FDB047N10

June 2010_FDB045AN08A0 F085N-Channel PowerTrench MOSFET 75V, 80A, 4.5m Features Applications rDS(ON) = 3.9m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Systems UIS Capability

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History: IRFI520A | 2N6784SM | 2SJ461 | IRLS610A

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