SUP75N08-10 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUP75N08-10  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 1120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 typ Ohm

Encapsulados: TO220AB

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SUP75N08-10 datasheet

 ..1. Size:84K  vishay
sup75n08-10 sub75n08-10.pdf pdf_icon

SUP75N08-10

SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-10 Top View N-Channel MOSFET SUP75N08-10 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75

 ..2. Size:750K  cn vbsemi
sup75n08-10.pdf pdf_icon

SUP75N08-10

SUP75N08-10 www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Backl

 5.1. Size:106K  vishay
sup75n08-09l sub75n08-09l.pdf pdf_icon

SUP75N08-10

SUP/SUB75N08-09L New Product Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 75 "75 a 75 "75 a 0.011 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-09L Top View N-Channel MOSFET SUP75N08-09L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter

 7.1. Size:72K  1
sup75n06-08 sub75n06-08.pdf pdf_icon

SUP75N08-10

SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75a Continuous

Otros transistores... STD30PF03, STD60NF3L, STD95NH02L, STT8205S, SUD08P06-155, SUD08P06-155L-E3, SUD10P06-280L, SUD40N08, 2SK2842, SUU50N06-07L, TN0200K-T1, TN0200TS, TP0101TS-T1, TPCA8036, UT100N03L, UT2301G-AE3-R, UT2302G-AE3