SUP75N08-10
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SUP75N08-10
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 180
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 80
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 8
ns
Cossⓘ - Выходная емкость: 1120
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065(typ)
Ohm
Тип корпуса:
TO220AB
- подбор MOSFET транзистора по параметрам
SUP75N08-10
Datasheet (PDF)
..1. Size:84K vishay
sup75n08-10 sub75n08-10.pdf 

SUP/SUB75N08-10Vishay SiliconixN-Channel 75-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)75 0.010 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N08-10Top ViewN-Channel MOSFETSUP75N08-10ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75
..2. Size:750K cn vbsemi
sup75n08-10.pdf 

SUP75N08-10www.VBsemi.twN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETaVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0065at VGS = 10 V 8080 0.0070at VGS = 6.0 V 75 17.1 nCAPPLICATIONS0.0085at VGS = 4.5 V 65 Primary Side SwitchingTO-220AB Synchronous RectificationD DC/AC Inverters LED Backl
5.1. Size:106K vishay
sup75n08-09l sub75n08-09l.pdf 

SUP/SUB75N08-09LNew ProductVishay SiliconixN-Channel 75-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V75 "75 a75 "75 a0.011 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N08-09LTop ViewN-Channel MOSFETSUP75N08-09LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter
7.1. Size:72K 1
sup75n06-08 sub75n06-08.pdf 

SUP/SUB75N06-08N-Channel Enhancement-Mode TransistorsProduct SummaryV(BR)DSS (V) rDS(on) (W) ID (A)60 0.008 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-08Top ViewN-Channel MOSFETSUP75N06-08Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75aContinuous
7.2. Size:67K vishay
sup75n03-07 sub75n03-07.pdf 

SUP/SUB75N03-07Vishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.007 @ VGS = 10 V 75a30300.01 @ VGS = 4.5 V 70DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N03-07Top ViewN-Channel MOSFETSUP75N03-07ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDra
7.3. Size:74K vishay
sup75n05-06 sub75n05-06.pdf 

SUP/SUB75N05-06Vishay SiliconixN-Channel 50-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)50 0.006 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N05-06Top ViewN-Channel MOSFETSUP75N05-06ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75a
7.4. Size:69K vishay
sup75n03-04.pdf 

SUP/SUB75N03-04Vishay SiliconixN-Channel 30-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Rated Maximum Junction 30 0.00475aRoHS*TemperatureCOMPLIANTTO-220ABDTO-263DRAIN connected to TABGDRAIN connected to TAB G D STop ViewSUB75N03-04G D STop ViewSUP75N03-04SOr
7.5. Size:66K vishay
sup75n04-05l sub75n04-05l.pdf 

SUP/SUB75N04-05LVishay SiliconixN-Channel 40-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.0055 @ VGS = 10 V 75a400.0065 @ VGS = 4.5 V 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N04-05LTop ViewN-Channel MOSFETSUP75N04-05LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbo
7.6. Size:71K vishay
sup75n06-07l sub75n06-07l.pdf 

SUP/SUB75N06-07LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY 175 C Rated Maximum Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)Available0.0075 at VGS = 10 V RoHS*6075a0.0085 at VGS = 4.5 V COMPLIANTTO-220ABDTO-263DRAIN connected to TAB GG D STop ViewG D SSUB75N06-07LTop ViewSSUP75N06-07LN-Channel MOSFET
7.7. Size:72K vishay
sup75n05-06a sub75n05-06a.pdf 

SUP/SUB75N05-06ANew ProductVishay SiliconixN-Channel 50-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)50 0.006 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSTop ViewN-Channel MOSFETOrdering Information: SUP75N05-06A Ordering Information: SUB75N05-06AABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symb
7.8. Size:88K vishay
sub75n06-07l sup75n06-07l.pdf 

SUP/SUB75N06-07LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY 175 C Rated Maximum Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)Available0.0075 at VGS = 10 V RoHS*6075a0.0085 at VGS = 4.5 V COMPLIANTTO-220ABDTO-263DRAIN connected to TAB GG D STop ViewG D SSUB75N06-07LTop ViewSSUP75N06-07LN-Channel MOSFET
7.9. Size:106K vishay
sup75n05-07 sub75n05-07.pdf 

SUP/SUB75N05-07New ProductVishay SiliconixN-Channel 55-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.007 @ VGS = 10 Va55 "75 a55 "750.009 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N05-07Top ViewN-Channel MOSFETSUP75N05-07ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter S
7.10. Size:102K vishay
sup75n06-12l sub75n06-12l.pdf 

SUP/SUB75N06-12LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.012 @ VGS = 10 V 7560600.014 @ VGS = 4.5 V 70DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-12LTop ViewN-Channel MOSFETSUP75N06-12LABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit Unit
7.11. Size:73K vishay
sup75n06-08 sub75n06-08.pdf 

SUP/SUB75N06-08Vishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.008 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-08Top ViewN-Channel MOSFETSUP75N06-08ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75
Другие MOSFET... FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, 5N60
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
History: IPL65R070C7
| IXFR27N80Q
| NCEP020N85D
| SLU70R600S2
| SQM18N33-160H
| IPA90R1K2C3
| 2SK2101-01MR