VB1106K MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VB1106K datasheet

..1. Size:485K cn vbsemi
vb1106k.pdf pdf_icon

VB1106K www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 100 2.8 at VGS = 10 V Low Threshold 2 V (typ.) 260 Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 2002/

9.1. Size:235K onsemi
nvb110n65s3f.pdf pdf_icon

MOSFET Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A NVB110N65S3F Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize V(BR)DSS RDS(ON) MAX

9.2. Size:512K cn vbsemi
vb1101m.pdf pdf_icon

VB1101M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.100 at VGS = 10 V 4.3 Material categorization 0.140 at VGS = 6 V 100 4.1 2.9 nC 0.150 at VGS = 4.5 V 3.7 APPLICATIONS DC/DC Converters Load Switch LED Backlight

9.3. Size:673K cn vbsemi
vb1102m.pdf pdf_icon

VB1102M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.240 at VGS = 10 V 2.0 Material categorization 0.250 at VGS = 6 V 100 1.8 2.9 nC 0.260 at VGS = 4.5 V 1.7 APPLICATIONS DC/DC Converters Load Switch LED Backlight

Otros transistores... UT2302G-AE3 , UT2302L-AE3 , UT2955G , UT6898G-S08-R , UT8205AG-AG6 , UTT25P10L , UTT80N10 , VB1102M , IRF640N , VB1218X , VB1240B , VB1240X , VB1330X , VB162KX , VB2140 , VB2290A , VB2658 .