VBA1210 Todos los transistores

 ..1. Size:436K  cn vbsemi
 vba1210.pdf

VBA1210 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

 9.1. Size:465K  fuji
 6mbp50vba120-50.pdf

http //www.fujielectric.com/products/semiconductor/ 6MBP50VBA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 50A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

 9.2. Size:452K  fuji
 6mbp25vba120-50.pdf

http //www.fujielectric.com/products/semiconductor/ 6MBP25VBA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 25A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

 9.3. Size:478K  fuji
 6mbp35vba120-50.pdf

http //www.fujielectric.com/products/semiconductor/ 6MBP35VBA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 35A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

 9.4. Size:708K  cn vbsemi
 vba1203m.pdf

VBA1203M www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.260 at VGS = 10 V 3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS D Primary Side Switch SO-8 SD 1 8 SD 2 7 G SD 3 6 GD 4 5 S Top View N-Chann