VBA1210 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBA1210
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012(typ) Ohm
Package: SO8
VBA1210 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBA1210 Datasheet (PDF)
vba1210.pdf
VBA1210www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
6mbp50vba120-50.pdf
http://www.fujielectric.com/products/semiconductor/6MBP50VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 50A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote
6mbp25vba120-50.pdf
http://www.fujielectric.com/products/semiconductor/6MBP25VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote
6mbp35vba120-50.pdf
http://www.fujielectric.com/products/semiconductor/6MBP35VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 35A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote
vba1203m.pdf
VBA1203Mwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.260 at VGS = 10 V 3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSD Primary Side SwitchSO-8SD1 8SD2 7GSD3 6GD4 5STop ViewN-Chann
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
