TSA20N65MR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSA20N65MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 192 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 149 nS
Cossⓘ - Capacitancia de salida: 264 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de TSA20N65MR MOSFET
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TSA20N65MR datasheet
tsa20n65mr.pdf
TSA20N65MR 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 20A,650V,RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC) minimize on-state resistance, provide superior switching High ruggedness performance, and with
tsa20n60mr.pdf
TSA20N60MR 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 20A,600V,RDS(on)=0.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withs
tsa20n50m.pdf
TSA20N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 20A,500V,Max.RDS(on)=0.28 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and
Otros transistores... VBA4658 , VBA4670 , VBA5102M , VBA5325 , VBA5415 , TSA100N20M , TSA18N50MR , TSA20N60MR , 10N65 , TSA23N50M , TSA24N50M , TSA28N50M , TSA3878 , TSA50N20MK , TSA82N25M , TSA82N30M , TSD16N25M .
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