TSA20N65MR Datasheet and Replacement
Type Designator: TSA20N65MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 149 nS
Cossⓘ - Output Capacitance: 264 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO3P
TSA20N65MR substitution
TSA20N65MR Datasheet (PDF)
tsa20n65mr.pdf

TSA20N65MR650V N-Channel MOSFETGeneral Description Features This Power MOSFET is produced using Truesemis 20A,650V,RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and with
tsa20n60mr.pdf

TSA20N60MR600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 20A,600V,RDS(on)=0.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withs
tsa20n50m.pdf

TSA20N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 20A,500V,Max.RDS(on)=0.28 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
Datasheet: VBA4658 , VBA4670 , VBA5102M , VBA5325 , VBA5415 , TSA100N20M , TSA18N50MR , TSA20N60MR , STP80NF70 , TSA23N50M , TSA24N50M , TSA28N50M , TSA3878 , TSA50N20MK , TSA82N25M , TSA82N30M , TSD16N25M .
History: CEB6086 | AP60WN2K3H | CSD25302Q2
Keywords - TSA20N65MR MOSFET datasheet
TSA20N65MR cross reference
TSA20N65MR equivalent finder
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History: CEB6086 | AP60WN2K3H | CSD25302Q2



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