All MOSFET. TSA20N65MR Datasheet

 

TSA20N65MR Datasheet and Replacement


   Type Designator: TSA20N65MR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 149 nS
   Cossⓘ - Output Capacitance: 264 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO3P
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TSA20N65MR Datasheet (PDF)

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TSA20N65MR

TSA20N65MR650V N-Channel MOSFETGeneral Description Features This Power MOSFET is produced using Truesemis 20A,650V,RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and with

 7.1. Size:986K  truesemi
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TSA20N65MR

TSA20N60MR600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 20A,600V,RDS(on)=0.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withs

 8.1. Size:846K  truesemi
 tsa20n50m.pdf pdf_icon

TSA20N65MR

TSA20N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 20A,500V,Max.RDS(on)=0.28 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: NCES120R062T4 | CS2N100LF | WMQ35P02TS | NTP30N06 | P06P03LVG | AP6950GYT-HF | IPP076N15N5

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