TSF10N80M Todos los transistores

 

TSF10N80M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSF10N80M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 240 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: TO220F
 
   - Selección ⓘ de transistores por parámetros

 

TSF10N80M Datasheet (PDF)

 ..1. Size:692K  truesemi
 tsf10n80m.pdf pdf_icon

TSF10N80M

TSF10N80M 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 10.0A,800V,Max.RDS(on)=1.10 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC)minimize on-state resistance, provide superior switching High ruggednessperformance,

 8.1. Size:1254K  truesemi
 tsp10n65m tsf10n65m.pdf pdf_icon

TSF10N80M

TSP10N65M/TSF10N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,650V,Max.RDS(on)=1.0 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a

 8.2. Size:1124K  truesemi
 tsp10n60m tsf10n60m.pdf pdf_icon

TSF10N80M

TSP10N60M/TSF10N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,600V,Max.RDS(on)=0.8 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance,

Otros transistores... TSD16N25M , TSD18N20M , TSD5N50MR , TSD5N60M , TSU5N60M , TSD5N65M , TSU5N65M , TSD840MD , IRF730 , TSF16N50MR , TSF16N60MR , TSF16N65MR , TSF18N20M , TSF18N50MR , TSF18N60MR , TSF20N50M , TSF20N60MR .

History: VS3825GPMC | IRLS530A | FDD13AN06A0-F085 | SPD30N03S2L-07G | FCP165N60E

 

 
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