TSF840MD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSF840MD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de TSF840MD MOSFET
TSF840MD datasheet
tsf840md.pdf
TSF840MD 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 8.0A,500V,Max.RDS(on)=0.95 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC) minimize on-state resistance, provide superior switching High ruggedness performance, and
tsf840mr.pdf
TSF840MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 9.0A,500V,Max.RDS(on)=0.8 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC) minimize on-state resistance, provide superior switching High ruggedness performance, and
tsp840mr tsf840mr.pdf
TSP840MR/TSF840MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 9.0A,500V,Max.RDS(on)=0.80 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC) minimize on-state resistance, provide superior switching High ruggedness perfor
Otros transistores... TSF4N90M , TSF60R190S2 , TSP60R190S2 , TSF65R190S2 , TSP65R190S2 , TSA65R190S2 , TSK65R190S2 , TSF65R360S2 , IRFP064N , TSF840MR , TSF9N90M , TSK80R240S1 , TSK82N25M , TSP10N60M , TSF10N60M , TSP10N65M , TSF10N65M .
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