TSF840MD Specs and Replacement
Type Designator: TSF840MD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO220F
TSF840MD substitution
- MOSFET ⓘ Cross-Reference Search
TSF840MD datasheet
tsf840md.pdf
TSF840MD 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 8.0A,500V,Max.RDS(on)=0.95 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC) minimize on-state resistance, provide superior switching High ruggedness performance, and ... See More ⇒
tsf840mr.pdf
TSF840MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 9.0A,500V,Max.RDS(on)=0.8 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒
tsp840mr tsf840mr.pdf
TSP840MR/TSF840MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 9.0A,500V,Max.RDS(on)=0.80 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC) minimize on-state resistance, provide superior switching High ruggedness perfor... See More ⇒
Detailed specifications: TSF4N90M, TSF60R190S2, TSP60R190S2, TSF65R190S2, TSP65R190S2, TSA65R190S2, TSK65R190S2, TSF65R360S2, IRFP064N, TSF840MR, TSF9N90M, TSK80R240S1, TSK82N25M, TSP10N60M, TSF10N60M, TSP10N65M, TSF10N65M
Keywords - TSF840MD MOSFET specs
TSF840MD cross reference
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