TSF840MD MOSFET. Datasheet pdf. Equivalent
Type Designator: TSF840MD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO220F
TSF840MD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSF840MD Datasheet (PDF)
tsf840md.pdf
TSF840MD500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 8.0A,500V,Max.RDS(on)=0.95 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
tsf840mr.pdf
TSF840MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 9.0A,500V,Max.RDS(on)=0.8 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
tsp840mr tsf840mr.pdf
TSP840MR/TSF840MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 9.0A,500V,Max.RDS(on)=0.80 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC)minimize on-state resistance, provide superior switching High ruggednessperfor
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
