TSP12N65M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSP12N65M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 231 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 180 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de TSP12N65M MOSFET
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TSP12N65M datasheet
tsp12n65m tsf12n65m.pdf
TSP12N65M/TSF12N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 12A,650V,Max.RDS(on)=0.75 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC) minimize on-state resistance, provide superior switching High ruggedness performance, a
tsp12n60m tsf12n60m.pdf
TSP12N60M/TSF12N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 12A,600V,Max.RDS(on)=0.7 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC) minimize on-state resistance, provide superior switching High ruggedness performance, an
tsd120n10at tsp120n10at tsg120n10at.pdf
TSD120N10AT,TSP120N10AT,TSG120N10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V N-Channel SGT MOSFET General Description Product Summary VDS 100V l Trench Power SGT technology ID (at VGS =10V) 55A l Very low on-resistance RDS(ON) RDS(ON) (at VGS =10V)
Otros transistores... TSK80R240S1, TSK82N25M, TSP10N60M, TSF10N60M, TSP10N65M, TSF10N65M, TSP12N60M, TSF12N60M, IRFP460, TSF12N65M, TSP13N50M, TSF13N50M, TSP4N60M, TSF4N60M, TSP5N65M, TSF5N65M, TSP740MR
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