TSP12N65M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSP12N65M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 231 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Paquete / Cubierta: TO220
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TSP12N65M Datasheet (PDF)
tsp12n65m tsf12n65m.pdf

TSP12N65M/TSF12N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 12A,650V,Max.RDS(on)=0.75 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 52nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a
tsp12n60m tsf12n60m.pdf

TSP12N60M/TSF12N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 12A,600V,Max.RDS(on)=0.7 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 52nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an
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TSD120N10AT,TSP120N10AT,TSG120N10ATWuxi Unigroup Microelectronics CO.,LTD.100V N-Channel SGT MOSFETGeneral DescriptionProduct SummaryVDS 100V l Trench Power SGT technologyID (at VGS =10V) 55Al Very low on-resistance RDS(ON)RDS(ON) (at VGS =10V)
Otros transistores... TSK80R240S1 , TSK82N25M , TSP10N60M , TSF10N60M , TSP10N65M , TSF10N65M , TSP12N60M , TSF12N60M , IRF640 , TSF12N65M , TSP13N50M , TSF13N50M , TSP4N60M , TSF4N60M , TSP5N65M , TSF5N65M , TSP740MR .
History: STP12N65M5 | PMV30ENEA | VBE1307
History: STP12N65M5 | PMV30ENEA | VBE1307



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