TSP12N65M Specs and Replacement
Type Designator: TSP12N65M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 231 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220
TSP12N65M substitution
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TSP12N65M datasheet
tsp12n65m tsf12n65m.pdf
TSP12N65M/TSF12N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 12A,650V,Max.RDS(on)=0.75 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC) minimize on-state resistance, provide superior switching High ruggedness performance, a... See More ⇒
tsp12n60m tsf12n60m.pdf
TSP12N60M/TSF12N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 12A,600V,Max.RDS(on)=0.7 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC) minimize on-state resistance, provide superior switching High ruggedness performance, an... See More ⇒
tsd120n10at tsp120n10at tsg120n10at.pdf
TSD120N10AT,TSP120N10AT,TSG120N10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V N-Channel SGT MOSFET General Description Product Summary VDS 100V l Trench Power SGT technology ID (at VGS =10V) 55A l Very low on-resistance RDS(ON) RDS(ON) (at VGS =10V) ... See More ⇒
Detailed specifications: TSK80R240S1, TSK82N25M, TSP10N60M, TSF10N60M, TSP10N65M, TSF10N65M, TSP12N60M, TSF12N60M, IRFP460, TSF12N65M, TSP13N50M, TSF13N50M, TSP4N60M, TSF4N60M, TSP5N65M, TSF5N65M, TSP740MR
Keywords - TSP12N65M MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: LND10N65 | LND12N60
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