TSP5N65M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSP5N65M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 55 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Encapsulados: TO220
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TSP5N65M datasheet
tsp5n65m tsf5n65m.pdf
TSP5N65M/TSF5N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.5A,650V,Max.RDS(on)=3.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness perform
tsp5n60m tsf5n60m.pdf
TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features 4.5A,600v,RDS(on)=2.2 @VGS=10V Gate charge (Typical 17nC) High ruggedness Fast switching 100% AvalancheTested Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi s advanced planar stripe, DMOS technology.This latest technology has been especially designed t
tsp5n60m tsf5n60m.pdf
TSP5N60M/TSF5N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.5A,600V,Max.RDS(on)=2.50 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness performance, an
Otros transistores... TSP12N60M, TSF12N60M, TSP12N65M, TSF12N65M, TSP13N50M, TSF13N50M, TSP4N60M, TSF4N60M, IRF640N, TSF5N65M, TSP740MR, TSF740MR, TSP7N60M, TSF7N60M, TSP7N65M, TSF7N65M, TSP7N80M
History: CHM04N6NGP | CES2309 | STI24NM65N | CES2313A
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