TSP5N65M Specs and Replacement
Type Designator: TSP5N65M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO220
TSP5N65M substitution
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TSP5N65M datasheet
tsp5n65m tsf5n65m.pdf
TSP5N65M/TSF5N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.5A,650V,Max.RDS(on)=3.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness perform... See More ⇒
tsp5n60m tsf5n60m.pdf
TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features 4.5A,600v,RDS(on)=2.2 @VGS=10V Gate charge (Typical 17nC) High ruggedness Fast switching 100% AvalancheTested Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi s advanced planar stripe, DMOS technology.This latest technology has been especially designed t... See More ⇒
tsp5n60m tsf5n60m.pdf
TSP5N60M/TSF5N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.5A,600V,Max.RDS(on)=2.50 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness performance, an... See More ⇒
Detailed specifications: TSP12N60M, TSF12N60M, TSP12N65M, TSF12N65M, TSP13N50M, TSF13N50M, TSP4N60M, TSF4N60M, IRF640N, TSF5N65M, TSP740MR, TSF740MR, TSP7N60M, TSF7N60M, TSP7N65M, TSF7N65M, TSP7N80M
Keywords - TSP5N65M MOSFET specs
TSP5N65M cross reference
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