TSP5N65M Datasheet and Replacement. Cross Reference Search

TSP5N65M Datasheet (PDF)

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TSP5N65M/TSF5N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 4.5A,650V,Max.RDS(on)=3.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperform

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TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features 4.5A,600v,RDS(on)=2.2@VGS=10V Gate charge (Typical 17nC) High ruggedness Fast switching 100% AvalancheTested Improved dv/dt capability General Description This Power MOSFET is produced using Truesemis advanced planar stripe, DMOS technology.This latest technology has been especially designed t

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TSP5N60M/TSF5N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.5A,600V,Max.RDS(on)=2.50 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an

Datasheet: TSP12N60M , TSF12N60M , TSP12N65M , TSF12N65M , TSP13N50M , TSF13N50M , TSP4N60M , TSF4N60M , IRF630 , TSF5N65M , TSP740MR , TSF740MR , TSP7N60M , TSF7N60M , TSP7N65M , TSF7N65M , TSP7N80M .