TSF7N65M Todos los transistores

 

TSF7N65M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSF7N65M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de TSF7N65M MOSFET

   - Selección ⓘ de transistores por parámetros

 

TSF7N65M Datasheet (PDF)

 ..1. Size:1213K  truesemi
tsp7n65m tsf7n65m.pdf pdf_icon

TSF7N65M

TSP7N65M/TSF7N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7A,650V,Max.RDS(on)=1.6 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and wi

 8.1. Size:1240K  truesemi
tsp7n60m tsf7n60m.pdf pdf_icon

TSF7N65M

TSP7N60M/TSF7N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.0A,600V,Max.RDS(on)=1.3 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

 9.1. Size:1260K  truesemi
tsp7n80m tsf7n80m.pdf pdf_icon

TSF7N65M

TSP7N80M/TSF7N80M800V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.0A,800V,Max.RDS(on)=1.6 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 40nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

Otros transistores... TSF4N60M , TSP5N65M , TSF5N65M , TSP740MR , TSF740MR , TSP7N60M , TSF7N60M , TSP7N65M , IRFP250N , TSP7N80M , TSF7N80M , TSP840MR , TSP8N65M , TSF8N65M , YJB150G06AK , YJB150N06BQ , YJB200G06B .

History: DH033N04E | TK14C65W5

 

 
Back to Top

 


 
.