TSF7N65M Datasheet and Replacement
Type Designator: TSF7N65M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO220F
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TSF7N65M Datasheet (PDF)
tsp7n65m tsf7n65m.pdf

TSP7N65M/TSF7N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7A,650V,Max.RDS(on)=1.6 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and wi
tsp7n60m tsf7n60m.pdf

TSP7N60M/TSF7N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.0A,600V,Max.RDS(on)=1.3 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
tsp7n80m tsf7n80m.pdf

TSP7N80M/TSF7N80M800V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.0A,800V,Max.RDS(on)=1.6 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 40nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: ALD1103DB | CHM85A3PAGP | SML100L16 | SQ9407EY-T1 | TK7P65W | ZXM66P03N8
Keywords - TSF7N65M MOSFET datasheet
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History: ALD1103DB | CHM85A3PAGP | SML100L16 | SQ9407EY-T1 | TK7P65W | ZXM66P03N8



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