TSF7N65M Datasheet and Replacement
Type Designator: TSF7N65M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO220F
TSF7N65M substitution
TSF7N65M Datasheet (PDF)
tsp7n65m tsf7n65m.pdf
TSP7N65M/TSF7N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7A,650V,Max.RDS(on)=1.6 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and wi
tsp7n60m tsf7n60m.pdf
TSP7N60M/TSF7N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.0A,600V,Max.RDS(on)=1.3 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
tsp7n80m tsf7n80m.pdf
TSP7N80M/TSF7N80M800V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.0A,800V,Max.RDS(on)=1.6 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 40nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
Datasheet: TSF4N60M , TSP5N65M , TSF5N65M , TSP740MR , TSF740MR , TSP7N60M , TSF7N60M , TSP7N65M , IRFB4115 , TSP7N80M , TSF7N80M , TSP840MR , TSP8N65M , TSF8N65M , YJB150G06AK , YJB150N06BQ , YJB200G06B .
History: TSP7N65M
Keywords - TSF7N65M MOSFET datasheet
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TSF7N65M replacement
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History: TSP7N65M
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