FDB2532 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB2532
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 310 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 79 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Búsqueda de reemplazo de FDB2532 MOSFET
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FDB2532 datasheet
fdb2532 f085.pdf
September 2010 FDB2532_F085 N-Channel PowerTrench MOSFET 150V, 79A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rec
fdb2532 fdp2532 fdi2532.pdf
August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage S
fdp2532 fdb2532.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb2532-f085.pdf
MOSFET N-Channel, POWERTRENCH) 150 V, 79 A, 16 mW FDB2532-F085 Features www.onsemi.com RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A Qg (tot) = 82 nC (Typ.), VGS = 10 V D Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) G AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant S A
Otros transistores... FDB12N50TM , FDB12N50U , FDB13AN06A0 , FDB14AN06LA0F085 , FDB14N30 , FDB150N10 , STU408D , FDB15N50 , IRLB4132 , FDB2532F085 , FDB2552 , FDB2572 , FDB2614 , STU409DH , FDB2710 , FDB28N30TM , FDB33N25 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E | ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E
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