FDB2532 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

September 2010FDB2532_F085N-Channel PowerTrench MOSFET150V, 79A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rec

August 2002FDB2532 / FDP2532 / FDI2532N-Channel PowerTrench MOSFET150V, 79A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage S

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSFET N-Channel,POWERTRENCH)150 V, 79 A, 16 mWFDB2532-F085Featureswww.onsemi.com RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A Qg (tot) = 82 nC (Typ.), VGS = 10 VD Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse)G AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantSA

September 2002FDB2572 / FDP2572N-Channel PowerTrench MOSFET150V, 29A, 54mFeatures Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono

October 2002FDB2552 / FDP2552N-Channel PowerTrench MOSFET150V, 37A, 36mFeatures Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A DC/DC Converters and Off-line UPS Qg(tot) = 39nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous R

April 2012FDB2552_F085N-Channel PowerTrench MOSFET150V, 37A, 36mFeatures Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A DC/DC Converters and Off-line UPS Qg(tot) = 39nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD TypeSMD TypeSMD TypeSMD TypeProduct specificationKDB2570(FDB2570)TO-263Unit: mmFeatures22 A, 150 V. RDS(ON) =80 m @VGS =10 V +0.24.57-0.2+0.11.27-0.1RDS(ON) =90m @VGS =6VLow gate chargeFast switching speed+0.10.1max1.27-0.1High performance trench technology for extremelylow RDS(ON)+0.10.81-0.12.54 1Gate+0.22Drain2.54-0.2 +0.1 +0.25.08-0.