All MOSFET. FDB2532 Datasheet

 

FDB2532 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDB2532

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 79 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 82 nC

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO263_D2PAK

FDB2532 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB2532 Datasheet (PDF)

1.1. fdb2532 f085.pdf Size:205K _fairchild_semi

FDB2532
FDB2532

September 2010 FDB2532_F085 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features Applications • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low QRR Body Diode • High Voltage Synchronous Rec

1.2. fdb2532 fdp2532 fdi2532.pdf Size:275K _fairchild_semi

FDB2532
FDB2532

August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16m? Features Applications rDS(ON) = 14m? (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifier

 5.1. fdb2570.pdf Size:138K _upd-mosfet

FDB2532
FDB2532

SMD Type SMD Type SMD Type SMD Type Product specification KDB2570(FDB2570) TO-263 Unit: mm Features 22 A, 150 V. RDS(ON) =80 m @VGS =10 V +0.2 4.57-0.2 +0.1 1.27-0.1 RDS(ON) =90m @VGS =6V Low gate charge Fast switching speed +0.1 0.1max 1.27-0.1 High performance trench technology for extremely low RDS(ON) +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.54-0.2 +0.1 +0.2 5.08-0.

5.2. fdb2552 fdp2552.pdf Size:256K _fairchild_semi

FDB2532
FDB2532

October 2002 FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36m? Features Applications rDS(ON) = 32m? (Typ.), VGS = 10V, ID = 16A DC/DC Converters and Off-line UPS Qg(tot) = 39nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifier UIS Capabili

 5.3. fdb2552 f085.pdf Size:416K _fairchild_semi

FDB2532
FDB2532

April 2012 FDB2552_F085 N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ Features Applications • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low QRR Body Diode • High Voltage Synchronous Rectifie

5.4. fdb2572 fdp2572.pdf Size:269K _fairchild_semi

FDB2532
FDB2532

September 2002 FDB2572 / FDP2572 N-Channel PowerTrench MOSFET 150V, 29A, 54m? Features Applications rDS(ON) = 45m? (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifier UIS Capa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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