YJL3415A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: YJL3415A
Código: 3415.
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.3 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 5.6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 7.2 nC
Tiempo de subida (tr): 63 nS
Conductancia de drenaje-sustrato (Cd): 219 pF
Resistencia entre drenaje y fuente RDS(on): 0.042 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET YJL3415A
YJL3415A Datasheet (PDF)
yjl3415a.pdf
RoHS COMPLIANT YJL3415A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -5.6A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 100 mohm DS(ON) GS ESD Protected Up to 2.0KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Des
yjl3416a.pdf
RoHS COMPLIANT YJL3416A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 7.0A D R ( at V =4.5V) 18 mohm DS(ON) GS R ( at V =2.5V) 22 mohm DS(ON) GS R ( at V =1.8V) 39 mohm DS(ON) GS ESD Protected Up to 3.5KV (HBM) General Description Trench Power LV MOSFET technology High Power and current hand
yjl3401a.pdf
RoHS COMPLIANT YJL3401A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed s
yjl3404a.pdf
RoHS COMPLIANT YJL3404A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 29 mohm DS(ON) GS R ( at V =4.5V) 40 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switching Applications Battery protection
yjl3400a.pdf
RoHS COMPLIANT YJL3400A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 27 mohm DS(ON) GS R ( at V =4.5V) 33 mohm DS(ON) GS R ( at V =2.5V) 51 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switch
yjl3407a.pdf
RoHS COMPLIANT YJL3407A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.1A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Battery protect
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
