YJL3416A Todos los transistores

 

YJL3416A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: YJL3416A
   Código: 8810.
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.3 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 7 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 8.1 nC
   Tiempo de subida (tr): 2.4 nS
   Conductancia de drenaje-sustrato (Cd): 225 pF
   Resistencia entre drenaje y fuente RDS(on): 0.018 Ohm
   Paquete / Cubierta: SOT23

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YJL3416A Datasheet (PDF)

 ..1. Size:634K  cn yangzhou yangjie elec
yjl3416a.pdf

YJL3416A YJL3416A

RoHS COMPLIANT YJL3416A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 7.0A D R ( at V =4.5V) 18 mohm DS(ON) GS R ( at V =2.5V) 22 mohm DS(ON) GS R ( at V =1.8V) 39 mohm DS(ON) GS ESD Protected Up to 3.5KV (HBM) General Description Trench Power LV MOSFET technology High Power and current hand

 8.1. Size:560K  cn yangzhou yangjie elec
yjl3415a.pdf

YJL3416A YJL3416A

RoHS COMPLIANT YJL3415A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -5.6A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 100 mohm DS(ON) GS ESD Protected Up to 2.0KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Des

 9.1. Size:642K  cn yangzhou yangjie elec
yjl3401a.pdf

YJL3416A YJL3416A

RoHS COMPLIANT YJL3401A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed s

 9.2. Size:578K  cn yangzhou yangjie elec
yjl3404a.pdf

YJL3416A YJL3416A

RoHS COMPLIANT YJL3404A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 29 mohm DS(ON) GS R ( at V =4.5V) 40 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switching Applications Battery protection

 9.3. Size:574K  cn yangzhou yangjie elec
yjl3400a.pdf

YJL3416A YJL3416A

RoHS COMPLIANT YJL3400A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 27 mohm DS(ON) GS R ( at V =4.5V) 33 mohm DS(ON) GS R ( at V =2.5V) 51 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switch

 9.4. Size:706K  cn yangzhou yangjie elec
yjl3407a.pdf

YJL3416A YJL3416A

RoHS COMPLIANT YJL3407A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.1A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Battery protect

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