YJL3416A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: YJL3416A
Código: 8810.
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.3 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 8.1 nC
Tiempo de subida (tr): 2.4 nS
Conductancia de drenaje-sustrato (Cd): 225 pF
Resistencia entre drenaje y fuente RDS(on): 0.018 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET YJL3416A
YJL3416A Datasheet (PDF)
yjl3416a.pdf
RoHS COMPLIANT YJL3416A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 7.0A D R ( at V =4.5V) 18 mohm DS(ON) GS R ( at V =2.5V) 22 mohm DS(ON) GS R ( at V =1.8V) 39 mohm DS(ON) GS ESD Protected Up to 3.5KV (HBM) General Description Trench Power LV MOSFET technology High Power and current hand
yjl3415a.pdf
RoHS COMPLIANT YJL3415A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -5.6A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 100 mohm DS(ON) GS ESD Protected Up to 2.0KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Des
yjl3401a.pdf
RoHS COMPLIANT YJL3401A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed s
yjl3404a.pdf
RoHS COMPLIANT YJL3404A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 29 mohm DS(ON) GS R ( at V =4.5V) 40 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switching Applications Battery protection
yjl3400a.pdf
RoHS COMPLIANT YJL3400A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 27 mohm DS(ON) GS R ( at V =4.5V) 33 mohm DS(ON) GS R ( at V =2.5V) 51 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switch
yjl3407a.pdf
RoHS COMPLIANT YJL3407A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.1A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Battery protect
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .