YJL3416A Specs and Replacement

Type Designator: YJL3416A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.4 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOT23

YJL3416A substitution

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YJL3416A datasheet

 ..1. Size:634K  cn yangzhou yangjie elec
yjl3416a.pdf pdf_icon

YJL3416A

RoHS COMPLIANT YJL3416A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 7.0A D R ( at V =4.5V) 18 mohm DS(ON) GS R ( at V =2.5V) 22 mohm DS(ON) GS R ( at V =1.8V) 39 mohm DS(ON) GS ESD Protected Up to 3.5KV (HBM) General Description Trench Power LV MOSFET technology High Power and current hand... See More ⇒

 8.1. Size:560K  cn yangzhou yangjie elec
yjl3415a.pdf pdf_icon

YJL3416A

RoHS COMPLIANT YJL3415A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -5.6A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 100 mohm DS(ON) GS ESD Protected Up to 2.0KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Des... See More ⇒

 9.1. Size:642K  cn yangzhou yangjie elec
yjl3401a.pdf pdf_icon

YJL3416A

RoHS COMPLIANT YJL3401A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed s... See More ⇒

 9.2. Size:578K  cn yangzhou yangjie elec
yjl3404a.pdf pdf_icon

YJL3416A

RoHS COMPLIANT YJL3404A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 29 mohm DS(ON) GS R ( at V =4.5V) 40 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switching Applications Battery protection ... See More ⇒

Detailed specifications: YJL3134KW, YJL3139KDW, YJL3139KT, YJL3400A, YJL3401A, YJL3404A, YJL3407A, YJL3415A, 7N60, YJP150N06AQ, YJP200G06A, YJP70G10A, YJQ20N04A, YJQ30N03A, YJQ3400A, YJQ3415A, YJQ35N04A

Keywords - YJL3416A MOSFET specs

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