YJL3416A MOSFET. Datasheet pdf. Equivalent
Type Designator: YJL3416A
Marking Code: 8810.
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.3 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8.1 nC
Rise Time (tr): 2.4 nS
Drain-Source Capacitance (Cd): 225 pF
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
Package: SOT23
YJL3416A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJL3416A Datasheet (PDF)
yjl3416a.pdf
RoHS COMPLIANT YJL3416A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 7.0A D R ( at V =4.5V) 18 mohm DS(ON) GS R ( at V =2.5V) 22 mohm DS(ON) GS R ( at V =1.8V) 39 mohm DS(ON) GS ESD Protected Up to 3.5KV (HBM) General Description Trench Power LV MOSFET technology High Power and current hand
yjl3415a.pdf
RoHS COMPLIANT YJL3415A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -5.6A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 100 mohm DS(ON) GS ESD Protected Up to 2.0KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Des
yjl3401a.pdf
RoHS COMPLIANT YJL3401A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed s
yjl3404a.pdf
RoHS COMPLIANT YJL3404A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 29 mohm DS(ON) GS R ( at V =4.5V) 40 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switching Applications Battery protection
yjl3400a.pdf
RoHS COMPLIANT YJL3400A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 5.6A D R ( at V =10V) 27 mohm DS(ON) GS R ( at V =4.5V) 33 mohm DS(ON) GS R ( at V =2.5V) 51 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switch
yjl3407a.pdf
RoHS COMPLIANT YJL3407A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -4.1A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Battery protect
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
