FDB2614 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDB2614 datasheet

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November 2006 tm FDB2614 200V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semicon- 62A, 200V, RDS(on) = 22.9m @VGS = 10 V ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superior switching

..2. Size:1100K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fdb2670.pdf pdf_icon

SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type Product specification Product specification KDB2670(FDB2670) Features TO-263 Unit mm 19 A, 200 V. RDS(ON) =130 m @VGS =10V +0.2 4.57-0.2 +0.1 1.27-0.1 Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely

Otros transistores... FDB14N30 , FDB150N10 , STU408D , FDB15N50 , FDB2532 , FDB2532F085 , FDB2552 , FDB2572 , 4435 , STU409DH , FDB2710 , FDB28N30TM , FDB33N25 , FDB3502 , FDB3632 , STU40N01 , FDB3652F085 .